Silicon-power PSM 80 BA A10_Power Semiconductor Half-Bridge Modu Bedienungsanleitung PDF herunterladen

PSM80BA10

Power Semiconductor Half-Bridge Module

Package

Schematic Symbol

PSM80BA10

Power Semiconductor Half-

Bridge Module

Data Sheet (Rev 01-

05/28/09)

Description

This module contains 4 Solidtron (CCS) Size 12 SGTOs

and 4 Size 12 S-Diodes, packaged for use in a solid

state current limiter or similar applications. This

module provides connections for the AC input and

output bus. The module includes an electrically

conductive base-plate. The module is typically used

at 60Hz.

The gate drive for the SGTOs are integrated into the

module and is powered by an external isolated 15V

DC supply.

The current controlled Solidtron (CCS) SGTO is an n-

type Thyristor in a high performance ThinPak

package. The device gate is similar to that found on a

traditional GTO Thyristor. The CCS features the high

peak current capability and low On-state voltage drop

common to SCR thyristors combined with high dI/dt

capability.

Application Specific Operating Conditions

SYMBOL

VALUE

UNITS

Peak Off-State Voltage (60Hz, 3 pulse)

VDRM

Off-State Rate of Change of Voltage Immunity dv/dt 1 kV/uSec

Repetitive Peak Anode Current (Pulse Width=30 uSec)

IASM

Gate Assisted Turn-off tqq < 15 uSec

Operating Junction Temperature TJO 125 oC

Maximum Junction Temperature TJM 140 oC

I2t for 8.3 ms, half-sine wave, Ipeak = 4kA I2t A2s

Anode-Cathode On-State Voltage at Tj = 140 C, VT 1.2 V

This SILICON POWER product is protected by one or more of the following U.S. Patents:

CAO 05/28/09

5,446,316

5,557,656

5,564,226

5,517,058

4,814,283

5,521,436

5,585,310

5,248,901

5,366,932

5,497,013

5,105,536

5,777,346

5,446,316

5,577,656

5,473,193

5,209,390

5,139,972

5,103,290

5,028,987

5,304,847

4,958,211

5,111,268

5,260,590

5,350,935

5,640,300

5,206,186

5,757,036

5,777,346

5,995,349

4,801,985

4,857,983

4,888,627

4,912,541

5,424,563

5,399,892

5,082,795

4,980,741

4,941,026

4,927,772

4,739,387

4,644,637

4,374,389

4,750,666

4,429,011

5,293,070

Application Specific Operating Conditions

For Each Module:

• Frequency = 60 Hz

• Blocking Voltage (peak) = 4 kV

• Current (rms) = 700A, 50% duty cycle

Features

• Low On-State Voltage

• Low trigger current

• Low Inductance Package

Module Operating Characteristics

1 2 3

Inhaltsverzeichnis

Seite 1 - PSM80BA10

PSM80BA10Power Semiconductor Half-Bridge Module Package Schematic Symbol PSM80BA10Power Semiconductor Half-Bridge Module Data Sheet (Rev 01-05/28/09

Seite 2 - Bridge Module

PSM80BA10Power Semiconductor Half-Bridge ModuleSGTOs (TJ=25oC unless otherwise specified)Performance Ratings MeasurementsParametersSymbolMin. Typ

Seite 3 - CORPORATION

PSM80BA10Power Semiconductor Half-Bridge ModuleNotes1.) Measurements made with a 10 Ohm shorting resistor connected between the gate and cathode. 2.

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Silicon-power PSM 80 BA A10_Power Semiconductor Half-Bridge Modu Bedienungsanleitung

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