Silicon-power HB HVI 5N002_Power Semiconductor Half-Bridge Modul Bedienungsanleitung PDF herunterladen

HB-HVI-5N002

Power Semiconductor Half-Bridge Module

Package

Schematic Symbol

Size:

2.48 in

4.25 in

1.21 in

203 gms

HB-HVI-5N002

Power Semiconductor Half-Bridge Module

Data Sheet (Rev 0 - 02/06/09)

Application: IUT HV Resonant Stage

Description

This module contains 2 Solidtron (CCS) Size 12

SGTOs and 10 Si Diodes (D2PAK), packaged

for use in a resonant converter or similar

applications. This module provides

connections for AC output and positive and

negative DC bus connections. The module

includes an electrically isolated base-plate.

The module is typically used at 20kHz.

The current controlled Solidtron (CCS) SGTO

is an n-type Thyristor in a high performance

ThinPakTM package. The device gate is similar

to that found on a traditional GTO Thyristor.

The CCS features the high peak current

capability and low On-state voltage drop

common to SCR thyristors combined with

high dI/dt capability.

The ThinPakTM Package is a perforated,

2.48 in

4.25 in

1.21 in

203 gms

Schematic Symbol

This SILICON POWER product is protected by one or more of the following U.S. Patents:

CAO 05/28/09

5,446,316

5,557,656

5,564,226

5,517,058

4,814,283

5,135,890

5,521,436

5,585,310

5,248,901

5,366,932

5,497,013

5,532,635

5,105,536

5,777,346

5,446,316

5,577,656

5,473,193

5,166,773

5,209,390

5,139,972

5,103,290

5,028,987

5,304,847

5,569,957

4,958,211

5,111,268

5,260,590

5,350,935

5,640,300

5,184,206

5,206,186

5,757,036

5,777,346

5,995,349

4,801,985

4,476,671

4,857,983

4,888,627

4,912,541

5,424,563

5,399,892

5,468,668

5,082,795

4,980,741

4,941,026

4,927,772

4,739,387

4,648,174

4,644,637

4,374,389

4,750,666

4,429,011

5,293,070

The ThinPakTM Package is a perforated,

metalized ceramic substrate attached to the

silicon using 302oC solder. It's small size and

low profile make it extremely attractive for

high di/dt applications where stray series

inductance must be kept to a minimum.

Application Specific Operating Conditions

For Each Device(SGTO+5 Si Diodes):

• Frequency = 10 kHz

• Voltage (rms) = 2.4 kV

• Voltage (peak) = 3.9kV

• Current (rms) = 14.6 Amps

• Current (peak) = 53.6 Amps

Features

• Low On-State Voltage

• Low trigger current

• Low Inductance Package

1 REV 0

1 2 3 4

Inhaltsverzeichnis

Seite 1 - HB-HVI-5N002

HB-HVI-5N002Power Semiconductor Half-Bridge Module Package Schematic Symbol Size:WLh2.48 in4.25 in1.21 in203 gmsHB-HVI-5N002Power Semiconductor Half

Seite 2

HB-HVI-5N002Power Semiconductor Half-Bridge ModuleSGTO Module Performance Ratings (TJ=25oC unless otherwise specified)Parameters Symbol Min. Typ. Max.

Seite 3

HB-HVI-5N002Power Semiconductor Half-Bridge ModuleSTTH1512 (5 Diodes in Series) http://www.st.com/stonline/books/pdf/docs/12157.pdf CAO 05/28/093 REV

Seite 4 - CORPORATION

HB-HVI-5N002Power Semiconductor Half-Bridge ModuleCAO 05/28/09SILICON POWER CORPORATION275 Great Valley ParkwayMalvern, PA 19355Ph: 610-407-4700Fax: 6

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Silicon-power HB HVI 5N002_Power Semiconductor Half-Bridge Modul Bedienungsanleitung

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