Silicon Power SP001GBLDU266O02 Datenblatt

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SP001GBLDU266O02
184pin DDR1 266 Unbuffered DIMM
This document is a general product description and is subject to change without notice
1. Description
The SP001GBLDU266O02 is a 64M x 8bits Double Data Rate SDRAM high-density
for DDR1-266.The SP001GBLDU266O02 consists of 16pcs CMOS 64x8 bits Double Data
Rate SDRAMs in 66 pin TSOP package, and a 2048 bits serial EEPROM on a 184-pin printed
circuit board. The SP001GBLDU266O02 is a Dual In-Line Memory Module and is intended
for mounting into 184-pin connector sockets. Synchronous design allows precise cycle
control with the use of system clock. Data I/O transactions are possible on both edges of
DQS. Range of operation frequencies, programmable latencies allow the same device to be
useful for a variety of high bandwidth, high performance memory system applications.
2. Features
Double--data--rate architecture; two data transfers per clock cycle
Bidirectional, data strobe (DQS) is transmitted/received with data, to be used in capturing
data at the receiver
DQS is edge--aligned with data for READs; center--aligned with data for WRITEs
Differential clock inputs (CK and /CK)
DLL aligns DQ and DQS transitions with CK transitions
Commands entered on each positive CK edge; data and data mask referenced to both
edges of DQS
Four internal banks for concurrent operation
Data mask (DM) for write data
Burst lengths: 2, 4, or 8
AUTOPRECHARGE option for each burst access
Auto Refresh and Self Refresh Modes
JEDEC standard 2.5 V (SSTL_2 compatible) I/O
66pin TSOP II Leaded & Pb-Free (RoHS compliant) package
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Inhaltsverzeichnis

Seite 1 - 2. Features

SP001GBLDU266O02 184pin DDR1 266

Seite 2 - 3. Module Specification

SP001GBLDU266O02 184pin DDR1 266

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